Early voltage of SiGe heterojunction bipolar transistors

被引：0
|
作者：
Yuan, JS [1 ]
Song, J [1 ]
机构：
[1] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32816 USA
来源：
1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 1997年
关键词：
D O I：
10.1109/HKEDM.1997.642342
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：102 / 105
页数：4
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