Direct extraction techniques for thermal resistance of MESFET and HEMT devices.

被引：7

作者：

Angelov, Iltcho ^{[1
]}

Karnfelt, Camilla ^{[1
]}

机构：

[1] Chalmers Univ Technol, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

来源：

2007 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2007年

关键词：

FET; flip chip; thermal resistance; Transistor Models;

D O I：

10.1109/RFIC.2007.380899

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple technique for direct extraction of junction temperature and thermal resistance for MESFET and HEMT FET is proposed and experimentally evaluated. The techniques were applied for thermal resistance extraction of the mHEMT devices in a microstrip three-stage amplifier before and after flip chip assembly.

引用

页码：351 / +

页数：2

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