Modelling parasitic bipolar devices in advanced smart-power technologies

被引：0
|
作者：
Leone, A [1 ]
Speciale, N [1 ]
Graffi, S [1 ]
Masetti, G [1 ]
Graziano, V [1 ]
机构：
[1] Univ Bologna, DEIS, I-40136 Bologna, Italy
来源：
PROCEEDINGS OF THE 1997 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1997年
关键词：
D O I：
10.1109/BIPOL.1997.647417
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we present an improvement of bipolar transistor models which can correctly predict the behavior of the reverse current gain. The proposed approach is particularly useful for modelling parasitic devices of the complex multiterminal bipolar and MOS transistors found in advanced smart-power technologies.
引用
收藏
页码：127 / 130
页数：4
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