Heteroatom-Doped Black Phosphorus and Its Application: A Review

Few-layer black phosphorus (BP) is a promising semiconductor with excellent optoelectronic properties. However, the poor stabilization and strong asymmetry between electron and hole transports hinder the application of BP. Doping of heteroatoms is an effective strategy to regulate the electronic structure and stability of BP without sacrificing its unique 2D structure, which is a promising way to tune the physicochemical properties of BP for various applications. In this review, the recent advances in doping engineering of BP are summarized, involving the theoretical prediction of new characteristic for doped BP and the corresponding experimental synthesis methods. The effects of dopant atoms on the structure and performance of BP and its related applications, such as the field-effect transistors, optoelectronic devices, inverter devices, and catalysis, are also summarized.