A low power fully CMOS integrated RF transceiver IC for wireless sensor networks

被引:20
|
作者
Seo, Hae-Moon [1 ]
Moon, YeonKug
Park, Yong-Kuk
Kim, Dongsu
Kim, Dong-Sun
Lee, Youn-Sung
Won, Kwang-Ho
Kim, Seong-Dong
Choi, Pyung
机构
[1] KETI, Ubiquitous Comp Ctr, Songnam 463816, South Korea
[2] KETI, Elect Mat & Packaging Res Ctr, Songnam 463816, South Korea
[3] Kyungpook Natl Univ, Dept Elect Engn, Taegu 702701, South Korea
关键词
CMOS; integrated circuit (IC); low power; RF transceiver; wireless sensor networks (WSNs);
D O I
10.1109/TVLSI.2007.893586
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A fully CMOS integrated RF transceiver for ubiquitous sensor networks in sub-gigahertz; industrial, scientific, and medical (ISM)-band applications is implemented and measured. The integrated circuit is fabricated in 0.18-mu m CMOS technology and packaged in leadless plastic chip carrier (LPCC) package. The fully monolithic transceiver consists of a receiver, a transmitter, and an RF synthesizer with on-chip voltage-controlled oscillator. The chip fully complies with the IEEE 802.15.4 wireless personal area network in sub-gigahertz mode. The cascaded noise figure of the overall receiver is 9.5 dB and the overall transmitter achieves less than 6.3% error vector magnitude for 40 kb/s mode. The chip uses 1.8-V power supply and the power consumption is 25 mW for reception mode and 29 mW for transmission mode.
引用
收藏
页码:227 / 231
页数:5
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