Improvement of Resistive Switching Uniformity for Al-Zn-Sn-O-Based Memory Device With Inserting HfO2 Layer

被引：21
|
作者：
Liu, Po-Tsun [1 ]
Fan, Yang-Shun [1 ]
Chen, Chun-Ching [1 ]
机构：
[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Dept Photon, Hsinchu 30010, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 12期
关键词：
Resistive switching; RRAM; AZTO; localized conducting filament;
D O I：
10.1109/LED.2014.2363491
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum-zinc-tin-oxide (AZTO) and HfO2-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO2 layer with low-concentration oxygen vacancy. The resistive switching stability and electrical uniformity of bilayer AZTO/HfO2 RRAM device are obviously enhanced as compared with the one only with a single layer of AZTO film. In addition, a physical mechanism for uniformity improvement is proposed by the localized conduction of conducting filaments.
引用
收藏
页码：1233 / 1235
页数：3
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