Ballistic nanodevices for terahertz data processing:: Monte Carlo simulations

被引：87
|
作者：
Mateos, J
Vasallo, BG
Pardo, D
González, T
Galloo, JS
Roelens, Y
Bollaert, S
Cappy, A
机构：
[1] Univ Salamanca, E-37008 Salamanca, Spain
[2] CNRS, Dept Hyperfrequences & Semicond, Inst Elect Microelect & Nanotechnol, UMR 9929, F-59652 Villeneuve Dascq, France
来源：
NANOTECHNOLOGY | 2003年 / 14卷 / 02期
关键词：
D O I：
10.1088/0957-4484/14/2/303
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
By using a semi-classical two-dimensional Monte Carlo simulation, simple devices (T-branch junctions (TBJs) and rectifying diodes) based on AlInAs/InGaAs ballistic channels are analysed. Initially, the model is validated by means of Hall-effect measurements of mobility and electron concentration in long (diffusive) channels. Then, quasi-ballistic transport at room temperature is confirmed in a 100 nm channel. Our simulations qualitatively reproduce the experimental results of electric potential measured in a TBJ appearing as a result of electron ballistic transport, and in close relation with the presence of space charge inside the structure. As examples of devices exploiting the ballistic transport of electrons, preliminary simulations of a multiplexor/demultiplexor and a rectifying diode are presented, demonstrating their capability for terahertz operation.
引用
收藏
页码：117 / 122
页数：6
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