Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers

被引：22

作者：

Maher, Michael J. ^{[1
]}

Mori, Kazunori ^{[2
]}

Sirard, Stephen M. ^{[3
]}

Dinhobl, Andrew M. ^{[2
]}

Bates, Christopher M. ^{[4
]}

Gurer, Emir ^{[5
]}

Blachut, Greory ^{[2
]}

Lane, Austin P. ^{[2
]}

Durand, William J. ^{[2
]}

Carlson, Matthew C. ^{[2
]}

Strahan, Jeffrey R. ^{[1
]}

Ellison, Christopher J. ^{[2
]}

Willson, C. Grant ^{[1
,2
]}

机构：

[1] Univ Texas Austin, Dept Chem, Austin, TX 78712 USA

[2] Univ Texas Austin, McKetta Dept Chem Engn, Austin, TX 78712 USA

[3] Lam Res Corp, 12345 North Lamar 150, Austin, TX 78753 USA

[4] CALTECH, Arnold & Mabel Beckman Labs Chem Synth, Pasadena, CA 91125 USA

[5] Lam Res Corp, 4400 Cushing Pkwy, Fremont, CA 94538 USA

来源：

ACS MACRO LETTERS | 2016年 / 5卷 / 03期

基金：

美国国家科学基金会;

关键词：

SURFACE NEUTRALIZATION; POLYMERIZATION; DESIGN; POLYDIMETHYLSILOXANE; NANOLITHOGRAPHY; LITHOGRAPHY; ORIENTATION; DERIVATIVES; FABRICATION; DEVICE;

D O I：

10.1021/acsmacrolett.6b00005

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-Hock-4-methoxystyrene) (PSnSPMOST) synthesized by reversible addition fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO2 via a two-step etch process utilizing oxidative and fluorine-based etch chemistries.

引用

页码：391 / 395

页数：5

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