A study of the phase transitions, electronic structures and optical properties of Mg2Si under high pressure

被引:39
|
作者
Yu, Fei [1 ,2 ]
Sun, Jiu-Xun [1 ,3 ]
Yang, Wei [1 ]
Tian, Rong-Gang [1 ]
Ji, Guang-Fu [3 ]
机构
[1] Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Sichuan, Peoples R China
[2] China W Normal Univ, Coll Phys & Elect Informat, Nanchong 637002, Peoples R China
[3] China Acad Engn Phys, Lab Shockwave & Detonat Phys, Inst Fluid Phys, Mianyang 621900, Peoples R China
关键词
Electronic structure; Optical properties; Phase transition; High pressure; IV ANTIFLUORITE COMPOUNDS; MG-SI ALLOYS; THERMOELECTRIC PROPERTIES; 1ST-PRINCIPLES CALCULATIONS; SEMICONDUCTORS; STABILITY; CRYSTALS; DYNAMICS; GROWTH; ENERGY;
D O I
10.1016/j.ssc.2009.12.031
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The phase transitions, electronic structures and optical properties of Mg2Si under high pressure were researched by using the first-principles density functional theory. The calculated results demonstrate that Mg2Si undergoes two pressure-induced phase transitions: one is the transition from the cubic anti-fluorite (Fm (3) over barm) structure to the orthorhombic anti-cotunnite (Pnma) structure at 8.38 GPa, and the other is the transition from the orthorhombic anti-cotunnite structure to the hexagonal Ni2In-type (P6(3)(m) over bar mc) structure at 28.84 GPa. A good agreement between the calculated transition pressures and the previous experimentally measured results has been found. The structural parameters of the high-pressure phases are characterized in detail; the discrepancy between the calculated and experimental results for the anti-cotunnite phase is pointed out and analyzed. Finally, the electronic and optical properties of both the ambient anti-fluorite and the high-pressure phases are discussed; they show that Mg2Si has become metallic at high pressure. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:620 / 624
页数:5
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