Yield stress strengthening in ultrafine-grained metals: A two-dimensional simulation of dislocation dynamics

被引:53
|
作者
Lefebvre, S.
Devincre, B.
Hoc, T.
机构
[1] Ecole Cent Paris, UMR 8579, CNRS, Lab MSSMAT, F-92295 Chatenay Malabry, France
[2] Altissemiconductor, F-91105 Corbeil Essonnes, France
[3] Off Natl Etud & Rech Aerosp, CNRS, UMR104, Lab Etud Microstruct, F-92322 Chatillon, France
关键词
plastic deformation; dislocation dynamics; size effects; simulation; semiconductor material;
D O I
10.1016/j.jmps.2006.10.002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of grain size on the tensile plastic deformation of ultrafine-grained copper polycrystals is investigated using a two-dimensional simulation of dislocation dynamics. Emphasis is put on the elementary mechanisms governing the yield stress in multislip conditions. Whatever the grain size, the yield stress is found to follow a Hall-Petch law. However, the elementary mechanism controlling slip transmission through the grain boundaries at yield is observed to change with the grain size. For the larger grain sizes, the stress concentrations due to dislocations piled-up at grain boundaries are responsible for the activation of plastic activity in the poorly stressed grains. For the smaller grain sizes, the pile-ups contain less dislocations and are less numerous, but the strain incompatibilities between grains become significant. They induce high internal stresses and favor multislip conditions in all grains. Based on these results, simple interpretations are proposed for the strengthening of the yield stress in ultrafine grained metals. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:788 / 802
页数:15
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