Strong enhancement of electrical conductivity in two-dimensional micrometer-sized RuO2 nanosheets for flexible transparent electrodes

被引:25
|
作者
Yoo, Somi [1 ]
Kim, Jeongmin [1 ]
Moon, Hongjae [1 ]
Kim, Se Yun [2 ]
Ko, Dong-su [3 ]
Shin, Weon Ho [2 ]
Hwang, Sungwoo [2 ]
Jung, Doh Won [2 ]
Sul, Soohwan [3 ]
Kwak, Chan [2 ]
Roh, Jong Wook [2 ]
Lee, Wooyoung [1 ]
机构
[1] Yonsei Univ, Dept Mat Sci & Engn, 50 Yonsei Ro, Seoul 03722, South Korea
[2] Samsung Elect, Samsung Adv Inst Technol, Inorgan Mat Lab, 130 Samsung Ro, Suwon 16678, Gyeonggi Do, South Korea
[3] Samsung Elect, Samsung Adv Inst Technol, Platform Technol Lab, 130 Samsung Ro, Suwon 16678, Gyeonggi Do, South Korea
基金
新加坡国家研究基金会;
关键词
TEMPERATURE-DEPENDENCE; MOS2; TRANSPORT; PHASE; LAYER;
D O I
10.1039/c6nr09894k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The enhancement in electrical transport properties of exfoliated individual RuO2 NSs was systemically investigated for their application in flexible electronics and optoelectronics. Decoration of Ag NPs on the surface of the RuO2 NSs provides donor electrons and dramatically increases the electrical conductivity of the monolayer RuO2 NSs by up to 3700%. The n-type doping behavior was confirmed via Hall measurement analysis of the doped RuO2 NSs. The layer number-and temperature-dependence of the conductivity were also investigated. Moreover, carrier concentration and mobility were obtained from Hall measurements, indicating that the undoped RuO2 NSs had ambipolar transport and semi-metallic characteristics. Moreover, the Ag-doped RuO2 NS multilayer fi(l)ms on polycarbonate substrates were demonstrated by the Langmuir-Blodgett assembly methods, showing one-third reduction in the sheet resistance and extraordinarily high bending stability that the change in the resistance was less than 1% over 50 000 cycles.
引用
收藏
页码:7104 / 7113
页数:10
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