MgAl2O4(001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target

被引：39
|
作者：
Belmoubarik, Mohamed [1 ]
Sukegawa, Hiroaki [1 ]
Ohkubo, Tadakatsu [1 ]
Mitani, Seiji [1 ]
Hono, Kazuhiro [1 ]
机构：
[1] Natl Inst Mat Sci, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan
来源：
APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 13期
关键词：
ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I：
10.1063/1.4945049
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We developed a fabrication process of an epitaxial MgAl2O4 barrier for magnetic tunnel junctions (MTJs) using a direct sputtering method from an MgAl2O4 spinel sintered target. Annealing the sputter-deposited MgAl2O4 layer sandwiched between Fe electrodes led to the formation of a (001)-oriented cation-disorder spinel with atomically sharp interfaces and lattice-matching with the Fe electrodes. A large tunnel magnetoresistance ratio up to 245% at 297K (436% at 3K) was achieved in the Fe/MgAl2O4/Fe(001) MTJ as well as an excellent bias voltage dependence. These results indicate that the direct sputtering is an alternative method for the realization of high performance MTJs with a spinel-based tunnel barrier. (C) 2016 AIP Publishing LLC.
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页数：5
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