Observation of magnetic domain structure in a ferromagnetic semiconductor (Ga, Mn)As with a scanning Hall probe microscope

被引：64
|
作者：
Shono, T
Hasegawa, T
Fukumura, T
Matsukura, F
Ohno, H
机构：
[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Tokyo Inst Technol, Dept Innovat Engineered mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[3] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 09期
关键词：
D O I：
10.1063/1.1290273
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have performed low-temperature scanning Hall probe microscopy on a ferromagnetic semiconductor (Ga0.957Mn0.043)As. The observed magnetic domain structure is a stripe-shaped pattern as has been observed in conventional nonsemiconductor ferromagnetic materials, and the measured magnetic field from the sample surface was small, reflecting the weak magnetization of (Ga, Mn)As. The domain width increased and the measured magnetic field decreased with raising temperature, which are consistent with calculated results, in which the exchange interaction between Mn spins deduced from the Curie temperature is assumed. (C) 2000 American Institute of Physics. [S0003-6951(00)04935-4].
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页码：1363 / 1365
页数：3
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