Scanning near-field optical microscopy in the near-infrared region using light emitting cantilever probes

被引：23
|
作者：
Heisig, S [1 ]
Rudow, O [1 ]
Oesterschulze, E [1 ]
机构：
[1] Univ Gesamthsch Kassel, Inst Tech Phys, D-34109 Kassel, Germany
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 08期
关键词：
D O I：
10.1063/1.1289261
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present an application of an active emitting cantilever probe for scanning near-field optical microscopy and scanning force microscopy. A vertical cavity surface emitting laser (VCSEL) integrated in a galliumarsenide (GaAs) cantilever serves as a light source at 980 nm emission wavelength that is below the band gap energy of the GaAs substrate material. The VCSEL of 8 mu m diameter is centered with respect to the metalized GaAs tip and illuminates a small near-field aperture at its apex. Aperture fabrication is accomplished by a proper thermal metal evaporation process. Optical measurements on a Fischer projection pattern revealed an edge resolution of about 80 nm. (C) 2000 American Institute of Physics. [S0003-6951(00)00434-4].
引用
收藏
页码：1071 / 1073
页数：3
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