A simple 4-port parasitic de-embedding methodology for high-frequency characterization of SiGeHBTs

被引:0
|
作者
Liang, QQ [1 ]
Cressler, JD [1 ]
Niu, GF [1 ]
Lu, Y [1 ]
Freeman, G [1 ]
Ahgren, D [1 ]
Malladi, RM [1 ]
Newton, K [1 ]
Harame, DL [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new 4-port S-parameter de-embedding methodology is presented. This de-embedding technique considers distributed on-wafer parasitics in the millimeter wave band (f > 30 GHz). The procedure is based on simple analytical calculations and requires no equivalent circuit modeling or electromagnetic simulations. Using both EM theory and HP-ADS simulations, we show that this technique can be used to accurately extract the S-parameters to frequencies higher than 100 GHz for state-of-the-art SiGe HBTs with a maximum cutoff frequency of 180 GHz. This method is also valid for use in decoupling package parasitic.
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页码:357 / 360
页数:4
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