Binding energy of impurity states in spherical quantum dots with parabolic confinement

被引:133
|
作者
Bose, C [1 ]
机构
[1] Jadavpur Univ, Dept Elect & Telecommun Engn, Calcutta 700032, W Bengal, India
关键词
D O I
10.1063/1.367065
中图分类号
O59 [应用物理学];
学科分类号
摘要
The binding energy of shallow hydrogenic impurities in spherical quantum dots (QDs) with parabolic confinement is calculated, using a variational approach within the effective mass approximation. The binding energy is computed for GaAs QD as a function of the dot size for different impurity positions, and also as a function of the impurity position for different dot sizes. The results show that the impurity binding energy increases with the reduction in the dot dimension. The binding energy is also found to depend on the location of the impurity, and the same is the maximum for the on-center impurity. (C) 1998 American Institute of Physics.
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页码:3089 / 3091
页数:3
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