Electron-optical-phonon interaction effect on the intradonor transition energies in doped GaAs-AlxGa1-xAs quantum wells

We report a calculation of 1s --> 2p(+) transition energies of a donor impurity magnetopolaron located in GaAs quantum wells in the presence of an external magnetic field. The impurity levels are obtained through a variational method by choosing a Gaussian trial wave function with only one variational parameter. Our theoretical results can account for the experimental data for the center-donor system when the approximation of a single well is used. We also found no evidence for the presence of electron-nonbulk-phonon interaction needed to understand this problem.