Ionizing-radiation detectors based on GaAs with deep centers

被引:6
|
作者
Aizenshtadt, GI
Kanaev, VG
Khan, AV
Khludkov, SS
Koretskaya, OB
Potapov, AI
Okaevich, LS
Tyazhev, AV
Tolbanov, OP
机构
[1] Tomsk State Univ, Tomsk 634050, Russia
[2] Siberian Phys Tech Inst, Tomsk, Russia
[3] NIIPP, State Sci Prod Enterprise, Tomsk, Russia
关键词
gallium arsenide; deep centers; detector structures; ionizing radiation; charge-collection efficiency;
D O I
10.1016/S0168-9002(99)00734-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The article presents results of investigation of interaction of the structures based on GaAs compensated by interaction of the deep centers with ionizing radiation of a wide spectral range. The structures are able to record single quantum of electromagnetic radiation with energy E greater than or equal to 5 keV, have high-speed response and radiation resistance and can be used for the development of high-efficiency multi-element detectors for modern diagnostic systems. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:188 / 191
页数:4
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