Mode beating in tapered high-power lasers

被引:0
|
作者
Rahman, BMA [1 ]
Abdallah, R [1 ]
Rajarajan, M [1 ]
Parameswaran, A [1 ]
Grattan, KTV [1 ]
机构
[1] City Univ London, Sch Engn & Math Sci, London EC1V 0HB, England
关键词
semiconductor optical amplifiers; numerical analysis; finite element method; beam propagation method;
D O I
10.1117/12.567444
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The evolution of the optical beam profile along a high-power tapered semiconductor amplifier has been demonstrated by using a rigorous finite element-based and full-vectorial modal solution, coupled with the beam propagation approach. Numerically simulated results indicate that many higher order modes are generated and propagate along the tapered structure and their interference with the fundamental mode causes variations of the optical beam, both along the transverse and the axial directions, which significantly modify the output beam quality.
引用
收藏
页码:36 / 47
页数:12
相关论文
共 50 条
  • [1] Mode beating in tapered high-power lasers
    Rahman, MA
    Abdallah, R
    Rajarajan, M
    Parameswaran, A
    Grattan, KTV
    INTEGRATED OPTICS AND PHOTONIC INTEGRATED CIRCUITS, 2004, 5451 : 233 - 242
  • [2] High-power high-brightness tapered mode lasers and amplifiers
    Kelemen, MT
    Weber, J
    Mikulla, M
    Weimann, G
    OPTICAL COMPONENTS AND MATERIALS II, 2005, 5723 : 198 - +
  • [3] Mode beating in tapered high-power deeply-etched semiconductor amplifiers
    Rajarajan, M
    Rahman, BMA
    Abdallah, RA
    Obayya, SSA
    Grattan, KTV
    Smart Structures, Devices, and Systems II, Pt 1 and 2, 2005, 5649 : 207 - 218
  • [4] High-Power Single-Mode Tapered Terahertz Quantum Cascade Lasers
    Wang, Tao
    Liu, Junqi
    Liu, Fengqi
    Wang, Lijun
    Zhang, Jinchuan
    Wang, Zhanguo
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 27 (14) : 1492 - 1494
  • [5] Tapered fiber bundles for combining high-power diode lasers
    Kosterin, A
    Temyanko, V
    Fallahi, M
    Mansuripur, M
    APPLIED OPTICS, 2004, 43 (19) : 3893 - 3900
  • [6] Optimisation of 660 nm high-power tapered diode lasers
    Kaspari, C.
    Blume, G.
    Feise, D.
    Paschke, K.
    Erbert, G.
    Weyers, M.
    IET OPTOELECTRONICS, 2011, 5 (03) : 121 - 127
  • [7] High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers
    D. I. Nikitichev
    Y. Ding
    M. Ruiz
    M. Calligaro
    N. Michel
    M. Krakowski
    I. Krestnikov
    D. Livshits
    M. A. Cataluna
    E. U. Rafailov
    Applied Physics B, 2011, 103 : 609 - 613
  • [8] High-power passively mode-locked tapered InAs/GaAs quantum-dot lasers
    Nikitichev, D. I.
    Ding, Y.
    Ruiz, M.
    Calligaro, M.
    Michel, N.
    Krakowski, M.
    Krestnikov, I.
    Livshits, D.
    Cataluna, M. A.
    Rafailov, E. U.
    APPLIED PHYSICS B-LASERS AND OPTICS, 2011, 103 (03): : 609 - 613
  • [9] Double-tapered-waveguide distributed feedback lasers for high-power single-mode operation
    Yu, SF
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (01) : 71 - 80
  • [10] Tapered high-power, high-brightness diode lasers: Design and performance
    Mikulla, M
    HIGH-POWER DIODE LASERS: FUNDAMENTALS, TECHNOLOGY, APPLICATIONS, 2000, 78 : 265 - 288