Time-resolved photoluminescence of ZnCdSe single quantum dots

被引：9
|
作者：
Zhang, BP
Li, YQ
Yasuda, T
Segawa, Y
Edamatsu, K
Itoh, T
机构：
[1] RIKEN, Inst Phys & Chem Res, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 9800868, Japan
[2] Ishinomaki Senshu Univ, Dept Electr Mat, Ishinomaki, Miyagi 9868580, Japan
[3] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷 / 214期
关键词：
quantum dots; ZnSe; time-resolved photoluminescence;
D O I：
10.1016/S0022-0248(00)00222-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Time-resolved photoluminescence study is carried out on ZnCdSe quantum dots (QDs) that are spontaneously formed on cleavage-induced fresh ZnSe (110) surface. Both rise and decay times show dependence on QD sizes. The size dependence of rise time is explained by the carrier capture from the ZnSe barrier into the QDs, which is determined by the overlap between the wave Functions of the QD state and the barrier state. On the other hand, the decay time is interpreted by taking into account the electron-hole separation and the overlap between the wave functions of the electrons and the holes. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：765 / 769
页数：5
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