Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy

被引：25

作者：

Chen, WK ^{[1
]}

Pan, YC ^{[1
]}

Lin, HC ^{[1
]}

Ou, J ^{[1
]}

Chen, WH ^{[1
]}

Lee, MC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 12B期

关键词：

InN; MOVPE;

D O I：

10.1143/JJAP.36.L1625

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375 degrees C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec: which explains the superior crystalline quality of our epitaxial film.

引用

页码：L1625 / L1627

页数：3

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