Analysis of the mosaic structure of an ordered (Al,Ga) N layer

被引:38
|
作者
Kirste, L [1 ]
Pavlov, KM
Mudie, ST
Punegov, VI
Herres, N
机构
[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
[2] Monash Univ, Sch Phys & Mat Engn, Clayton, Vic 3800, Australia
[3] Syktyvkar State Univ, Dept Solid State Phys, Syktyvkar 167001, Russia
来源
JOURNAL OF APPLIED CRYSTALLOGRAPHY | 2005年 / 38卷
关键词
D O I
10.1107/S0021889804030675
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The mosaic structure of an (Al, Ga) N layer grown on (0001) sapphire showing natural ordering was studied by high-resolution X-ray diffraction (HRXRD) reciprocal-space mapping. The direction-dependent mosaicity of the layer has been elaborated using maps of symmetrical and asymmetrical reflections. The reciprocal-lattice points show significant broadening depending on the direction in reciprocal space, the diffraction order and the reflection type ( fundamental or superstructural). The evaluation followed two paths: (i) a procedure based on the Williamson - Hall plot and (ii) a new approach based on the statistical diffraction theory (SDT). Here, the transformed Takagi equations were implemented for the simulation of the reciprocal-space maps (RSM) for symmetrical and asymmetrical reflections. The reconstruction comprised the mosaic block size, their average rotation angle and the spatial distribution of some components of the microdistortion tensor. The results based on the SDT modelling agree well with those obtained by the Williamson - Hall method, while providing a higher degree of precision and detail.
引用
收藏
页码:183 / 192
页数:10
相关论文
共 50 条
  • [1] Electronic structure of (In,Ga)As - (Ga,Al)As strained-layer quantum wells
    Dunstan, David J.
    Gil, Bernard
    Materials science & engineering. B, Solid-state materials for advanced technology, 1993, B20 (1-2): : 58 - 61
  • [2] Spatially resolved analysis of electronic structure in (In, Ga, Al)N - Compounds by EELS
    Brockt, G
    Lakner, H
    ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2, 1998, : 625 - 626
  • [3] Electronic structure analysis of (In,Ga,Al)N heterostructures on the nanometre scale using EELS
    Lakner, H
    Rafferty, B
    Brockt, G
    JOURNAL OF MICROSCOPY-OXFORD, 1999, 194 : 79 - 83
  • [4] Al0.25Ga0.75N/GaN Schottky Barrier Photodetectors with an Al0.3Ga0.7N Intermediate Layer
    Lee, K. H.
    Chang, P. C.
    Chang, S. J.
    Su, Y. K.
    Wang, Y. C.
    Yu, C. L.
    Wu, S. L.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (07) : J199 - J202
  • [5] Advantage of SiO2 Intermediate Layer on the Electron Injection for Ti/n-Al0.60Ga0.40N Structure
    Shao, Hua
    Che, Jiamang
    Kou, Jianquan
    Chu, Chunshuang
    Tian, Kangkai
    Zhang, Yonghui
    Bi, Wengang
    Zhang, Zi-Hui
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (09) : 3548 - 3552
  • [6] ELECTRONIC-STRUCTURE OF (IN,GA)AS-(GA,AL)AS STRAINED-LAYER QUANTUM-WELLS
    DUNSTAN, DJ
    GIL, B
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 20 (1-2): : 58 - 61
  • [7] Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps
    Nagasawa, Yosuke
    Hirano, Akira
    Ippommatsu, Masamichi
    Sako, Hideki
    Hashimoto, Ai
    Sugie, Ryuichi
    Honda, Yoshio
    Amano, Hiroshi
    Akasaki, Isamu
    Kojima, Kazunobu
    Chichibu, Shigefusa F.
    APPLIED PHYSICS EXPRESS, 2020, 13 (12)
  • [8] Electronic structure of a (3x3)-ordered silicon layer on Al(111)
    Sato, Yusuke
    Fukaya, Yuki
    Cameau, Mathis
    Kundu, Asish K.
    Shiga, Daisuke
    Yukawa, Ryu
    Horiba, Koji
    Chen, Chin-Hsuan
    Huang, Angus
    Jeng, Horng-Tay
    Ozaki, Taisuke
    Kumigashira, Hiroshi
    Niibe, Masahito
    Matsuda, Iwao
    PHYSICAL REVIEW MATERIALS, 2020, 4 (06):
  • [9] Long-period ordered superstructures that appear in an (Al,Ga)-rich (Al,Ga)Ti system
    Nakano, Takayoshi
    Hagihara, Koji
    Hata, Satoshi
    Shigyo, Hajime
    Nakashima, Hideharu
    Umakoshi, Yukichi
    Arya, Ashok
    Kulkarni, Ulhas D.
    PHILOSOPHICAL MAGAZINE, 2013, 93 (1-3) : 22 - 37
  • [10] Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure
    Wang, Cuimei
    Wang, Xiaoliang
    Hu, Guoxin
    Wang, Junxi
    Li, Jianping
    Wang, Zhanguo
    APPLIED SURFACE SCIENCE, 2006, 253 (02) : 762 - 765