The longitudinal spin Seebeck effect (LSSE) consists in the generation of a spin current parallel to a temperature gradient in a magnetic material. The LSSE has only been measured unequivocally in magnetic insulators because in metallic films it is contaminated by the anomalous Nernst effect (ANE). Here we report theoretical and experimental studies of the LSSE in the metallic ferromagnet N81Fe19 (permalloy-Py) separated from the ANE. We have used trilayer samples of Py/NiO/NM (NM is a normal metal, Pt or Ta) under a temperature gradient perpendicular to the plane to generate a spin current in Py that is transported across the NiO layer and reaches the NM layer, where it is converted into a charge current by the inverse spin Hall effect. The LSSE is detected by a voltage signal in the NM layer while the ANE is measured by the voltage induced in the Py layer. The separation of the two effects is made possible because the antiferromagnetic insulator NiO layer transports spin current while providing electrical insulation between the Py and NM layers. The measured spin Seebeck coefficient for Py has a value similar to the one for the ferrimagnetic insulator yttrium iron garnet, with the same sign, and is in good agreement with the value calculated with a thermoelectric spin drift-diffusion model.
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Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Kikkawa, T.
Uchida, K.
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Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Uchida, K.
Shiomi, Y.
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Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Shiomi, Y.
Qiu, Z.
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Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Qiu, Z.
Hou, D.
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Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Fudan Univ, Dept Phys, Shanghai 200433, Peoples R ChinaTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Hou, D.
Tian, D.
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Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Fudan Univ, Dept Phys, Shanghai 200433, Peoples R ChinaTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Tian, D.
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Nakayama, H.
Jin, X-F
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Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Fudan Univ, Dept Phys, Shanghai 200433, Peoples R ChinaTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Jin, X-F
Saitoh, E.
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Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
Japan Sci & Technol Agcy, CREST, Tokyo 1020076, Japan
Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
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Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Kikkawa, T.
Uchida, K.
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Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Uchida, K.
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Daimon, S.
Shiomi, Y.
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Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Shiomi, Y.
Adachi, H.
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Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan
Japan Sci & Technol Agcy, CREST, Tokyo 1020076, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Adachi, H.
Qiu, Z.
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Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Qiu, Z.
Hou, D.
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Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Hou, D.
Jin, X. -F.
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Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
Fudan Univ, Dept Phys, Shanghai 200433, Peoples R ChinaTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Jin, X. -F.
Maekawa, S.
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Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan
Japan Sci & Technol Agcy, CREST, Tokyo 1020076, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Maekawa, S.
Saitoh, E.
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Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan
Japan Sci & Technol Agcy, CREST, Tokyo 1020076, Japan
Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
机构:
Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398527, Japan
Hiroshima Univ, Grad Sch Adv Sci Matter, Dept Semicond Elect & Integrat Sci, Higashihiroshima, Hiroshima 7398530, JapanHiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398527, Japan
Ono, Tatsuyoshi
Hirata, Satoshi
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Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398527, Japan
Hiroshima Univ, Grad Sch Adv Sci Matter, Dept Semicond Elect & Integrat Sci, Higashihiroshima, Hiroshima 7398530, JapanHiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398527, Japan
Hirata, Satoshi
Amemiya, Yoshiteru
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Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398527, JapanHiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398527, Japan
Amemiya, Yoshiteru
Tabei, Tetsuo
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Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398527, JapanHiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398527, Japan
Tabei, Tetsuo
Yokoyama, Shin
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Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398527, Japan
Hiroshima Univ, Grad Sch Adv Sci Matter, Dept Semicond Elect & Integrat Sci, Higashihiroshima, Hiroshima 7398530, JapanHiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398527, Japan