Distributed approximating functional fit of the H-3 ab initio potential-energy data of Liu and Siegbahn

被引:37
|
作者
Frishman, A
Hoffman, DK
Kouri, DJ
机构
[1] IOWA STATE UNIV SCI & TECHNOL,AMES LAB,AMES,IA 50011
[2] UNIV HOUSTON,DEPT PHYS,HOUSTON,TX 77204
来源
JOURNAL OF CHEMICAL PHYSICS | 1997年 / 107卷 / 03期
关键词
D O I
10.1063/1.474380
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report a distributed approximating functional (DAF) fit of the nb initio potential-energy data of Liu [J. Chem. Phys. 58, 1925 (1973)] and Siegbahn and Liu [ibid. 68, 2457 (1978)]. The DAF-fit procedure is based on a variational principle, and is systematic and general. Only two adjustable parameters occur in the DAF leading to a fit which is both accurate (to the level inherent in the input data; RMS error of 0.2765 kcal/mol) and smooth (''well-tempered,'' in DAF terminology). In addition, the LSTH surface of Truhlar and Horowitz based on this same data [J. Chem. Phys. 68, 2466 (1978)] is itself approximated using only the values of the LSTH surface on the same,grid coordinate points as the at initio data, and the same DAF parameters. The purpose of this exercise is to demonstrate that the DAF delivers a well-tempered approximation to a known function that closely mimics the true potential-energy surface. As is to be expected, since there is only roundoff error present in the LSTH input data, even more significant figures of fitting accuracy are obtained. The RMS error of the DAF fit, of the LSTH surface at the input points, is 0.0274 kcal/mol, and a smooth fit, accurate to better than I cm(-1), can be obtained using more than 287 input data points. (C) 1997 American Institute of Physics.
引用
收藏
页码:804 / 811
页数:8
相关论文
共 50 条
  • [1] AB-INITIO POTENTIAL-ENERGY SURFACE FOR LINEAR H-3
    LIU, B
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1973, 58 (05): : 1925 - 1937
  • [2] AB-INITIO POTENTIAL-ENERGY SURFACES FOR THE 2 LOWEST (1)A' STATES OF H-3(+)
    ICHIHARA, A
    YOKOYAMA, K
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1995, 103 (06): : 2109 - 2112
  • [3] AB-INITIO POTENTIAL-ENERGY SURFACE FOR H-H2
    PARTRIDGE, H
    BAUSCHLICHER, CW
    STALLCOP, JR
    LEVIN, E
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1993, 99 (08): : 5951 - 5960
  • [4] COMPLETE BASIS SET POTENTIAL-ENERGY SURFACES FOR H-3 AND H-3
    OCHTERSKI, JW
    PETERSSON, GA
    [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1990, 199 : 237 - PHYS
  • [5] AB-INITIO POTENTIAL-ENERGY SURFACE FOR THE H+OCS REACTION
    RICE, BM
    CARTLAND, HE
    CHABALOWSKI, CF
    [J]. CHEMICAL PHYSICS LETTERS, 1993, 211 (4-5) : 283 - 292
  • [6] POTENTIAL-ENERGY SURFACE FOR LOWEST QUARTET STATE OF H-3
    MURRELL, JN
    VARANDAS, AJC
    GUEST, MF
    [J]. MOLECULAR PHYSICS, 1976, 31 (04) : 1129 - 1135
  • [7] ACCURATE 3-DIMENSIONAL POTENTIAL-ENERGY SURFACE FOR H-3
    SIEGBAHN, P
    LIU, B
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1978, 68 (05): : 2457 - 2465
  • [8] FUNCTIONAL REPRESENTATION OF LIU AND SIEGBAHNS ACCURATE ABINITIO POTENTIAL-ENERGY CALCULATIONS FOR H+H2
    Truhlar, DG
    Horowitz, CJ
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1978, 68 (05): : 2466 - 2476
  • [9] AB-INITIO VALENCE BOND CALCULATIONS OF POTENTIAL-ENERGY SURFACE FOR H+H2
    NORBECK, JM
    CERTAIN, PR
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1975, 63 (10): : 4127 - 4132
  • [10] DIM POTENTIAL-ENERGY SURFACES FOR EXCITED-STATES OF H-3
    ZAITSEVSKII, AV
    NEMUKHIN, AV
    STEPANOV, NF
    [J]. MOLECULAR PHYSICS, 1980, 41 (02) : 377 - 382