Defect structure of ion-irradiated amorphous SiO2

Uniformly enhanced small-angle X-ray scattering intensities of amorphous SiO2, measured following irradiation with 320 keV H+ and He+ beams, are shown to be correlated, irrespective of the incident ion, with the O and Si cumulative displacement yields. Damage by both beams originated primarily from nuclear stopping but, under H+-ion irradiation, contributions from ionization processes were significant as well. At low beam fluences, the irradiated structure is compatible with the presence of stable radiation-induced interstitial-like O and Si atoms and complementary O and Si vacancy-like sites. There is no evidence for recovery near room temperature of the modified structure to the pre-irradiated state or for formation of colloidal-size scattering centers, such as gas bubbles or voids. Thus, ion-irradiation-induced changes in physical and chemical properties of silica seem to be due to the effect of the preserved primary atomic displacement damage.