Robustly protected carrier spin relaxation in electrostatically doped transition-metal dichalcogenides

被引：14

作者：

Zhang, Y. J. ^{[1
,2
,3
,4
]}

Shi, W. ^{[5
]}

Ye, J. T. ^{[6
]}

Suzuki, R. ^{[1
,2
]}

Iwasa, Y. ^{[1
,2
,7
]}

机构：

[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan

[2] Univ Tokyo, QPEC, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan

[3] Osaka Univ, Inst Sci & Ind Res, 8-1 Mihogaoka, Ibaraki, Osaka 0670047, Japan

[4] Max Planck Inst Festkorperforsch, Heisenbergstr 1, D-70569 Stuttgart, Germany

[5] Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA

[6] Univ Groningen, Zernike Inst Adv Mat, Device Phys Complex Mat, Nijenborgh 4, NL-9747 AG Groningen, Netherlands

[7] RIKEN, CEMS, Wako, Saitama 3510198, Japan

来源：

PHYSICAL REVIEW B | 2017年 / 95卷 / 20期

基金：

日本学术振兴会; 欧洲研究理事会;

关键词：

WEAK-LOCALIZATION; QUANTUM-WELLS; VALLEY POLARIZATION; ORBIT INTERACTION; MONOLAYER MOS2; TRANSISTORS; SEMICONDUCTOR; COHERENCE; ELECTRONS; WS2;

D O I：

10.1103/PhysRevB.95.205302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transition-metal dichalcogenides are unique semiconductors because of their exclusive coupling between the spin and the valley degrees of freedom. The spin flip simultaneously requires a large amount of the crystal momentum variation; hence most of the carrier scattering is expected to be the spin-conserving intravalley scattering. Analysis of the quantum interference effects on the magnetoconductivity in WSe2, MoSe2, andMoS(2) reveals that the spin-relaxation time is orders of magnitude longer than the carrier momentum scattering time, indicating that the valley-spin coupling robustly protects the spin polarization from carrier scatterings. In addition, the electron-spin-relaxation time of MoSe2 is found to be anomalously short compared to other members, which is likely the origin of the ultrafast valley scattering of excitons in MoSe2.

引用

页数：6

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