Low-Temperature Growth of Inverted Hexagonal ZnS/CdS Quantum Dots: Functional and Luminescence Properties

被引:3
|
作者
Kumar, Hitanshu [1 ]
Barman, P. B. [1 ]
Singh, Ragini Raj [1 ]
机构
[1] Jaypee Univ Informat Technol, Dept Phys & Mat Sci, Solan 173234, HP, India
关键词
Quantum dots; inverted core/shell structures; electron microscopy; luminescence; FTIR; CORE/SHELL NANOCRYSTALS; NANOPARTICLES; ZNS; CDS;
D O I
10.1007/s11664-014-3567-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel low-temperature wet chemical method is proposed for direct growth of type-I inverted hexagonal ZnS/CdS quantum dots (QD). 2-Mercaptoethanol (2-ME) was used as a capping agent for confinement by passivation, and also helped to prevent agglomeration of the QD. The band gap calculated from optical absorption spectra was 2.63 eV for the smallest core/shell QD. Absorption edge onset and results from transmission electron microscopy revealed formation of inverted core/shell QD. X-ray diffraction studies revealed the ZnS/CdS had a stable hexagonal crystal structure at low temperature. The average diameter of the core/shell QD was 4.2 nm. Tunable luminescence with substantial tunability was revealed by study of the photoluminescence of the inverted ZnS/CdS quantum dots. Surface passivation of ZnS/CdS QD by 2-ME was confirmed by Fourier-transform infrared spectroscopy.
引用
收藏
页码:675 / 681
页数:7
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