GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 μm intersubband absorption

被引：2

作者：

Aggerstam, T. ^{[1
]}

Andersson, T. G. ^{[2
]}

Holmstroem, P. ^{[3
]}

Jaenes, P. ^{[3
]}

Liu, X. Y. ^{[2
]}

Lourdudoss, S. ^{[1
]}

Thylen, L. ^{[3
]}

机构：

[1] Royal Inst Technol, Dept Microelect & Appl phys, Electrum 229, S-16440 Kista, Sweden

[2] Chalmers, Appl Semicond Phys, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden

[3] Royal Inst Technol KTH, Lab Opt Photon & Quantum Elect, Dept Microelect & Appl Phys, SE-16440 Kista, Sweden

来源：

QUANTUM SENSING AND NANOPHOTONIC DEVICES IV | 2007年 / 6479卷

关键词：

GaN; AlN; multiple quantum well; MBE; intersubband; template;

D O I：

10.1117/12.695457

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have used MBE to grow MQW structures on MOVPE GaN/sapphire templates. The MQW devices are intended for high speed intersubband electroabsorption modulator devices operating at 1.55-mu m. The GaN/AlN multiple quantum well material was systematically studied regarding the surface morphology, structural characterization and optical property by atomic force microscopy, X-ray diffraction and Fourier transform infrared spectroscopy, respectively. The intersubband resonance energy was also calculated considering many-body effects in n-type doped structures. The multiple quantum well structure showed superior performance in terms of linewidth when grown on GaN templates as compared on sapphire. GaN quantum well and AlN barriers with a thickness of 3.3 and 4.2 nm respectively resulted in FWHM of the intersubband absorption peak as low as 93 meV at an absorption energy of 700 meV. This is promising for intersubband modulator applications.

引用

页数：12

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