Phase escape of current-biased Josephson junctions

被引：0

作者：

Cao Wen-Hui ^{[1
]}

Yu Hai-Feng ^{[1
]}

Tian Ye ^{[1
]}

Chen Geng-Hua ^{[1
]}

Zhao Shi-Ping ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

CHINESE PHYSICS B | 2010年 / 19卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Nb junctions; phase escapes; macroscopic quantum phenomena; discrete energy levels; ZERO-VOLTAGE STATE; LEVEL QUANTIZATION; QUANTUM; LIFETIME;

D O I：

10.1088/1674-1056/19/6/067401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Switching current distributions of an Nb/Al-AlOx/Nb Josephson junction are measured in a temperature range from 25 mK to 800 mK. We analyse the phase escape properties by using the theory of Larkin and Ovchinnikov (LO) which takes discrete energy levels into account. Our results show that the phase escape can be well described by the LO approach for temperatures near and below the crossover from thermal activation to macroscopic quantum tunneling. These results are helpful for further study of macroscopic quantum phenomena in Josephson junctions where discrete energy levels need to be considered.

引用

页数：4

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