Electron-electron interaction in doped GaAs at high magnetic field

被引:14
|
作者
Poirier, W [1 ]
Mailly, D
Sanquer, M
机构
[1] CEA, DSM, DRECAM, SPEC,CE Saclay, F-91191 Gif Sur Yvette, France
[2] CNRS, Microstruct & Microelect Lab, F-92220 Bagneux, France
来源
PHYSICAL REVIEW B | 1998年 / 57卷 / 07期
关键词
D O I
10.1103/PhysRevB.57.3710
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We observe an inversion of the low-temperature dependence for the conductivity of doped GaAs by application of a magnetic field. This inversion happens when omega(c) tau(tr)similar or equal to 1, as predicted by Houghton et al. [Phys. Rev. B 25, 2196 (1982)] for the correction to conductivity due to screened Coulomb repulsion in the diffusive regime. This correction follows the oscillating behavior of the transport elastic time entering the Shubnikov-de Haas regime. For omega(c) tau greater than or equal to 1, we observe that the Hartree part of the interaction correction is suppressed. Moreover, the total correction seems strongly reduced, although its dependence stays logarithmic.[S0163-1829(98)06604-1].
引用
收藏
页码:3710 / 3713
页数:4
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