Conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers through selective oxidation

被引：210
|
作者：
Fu, K-M C. [1 ]
Santori, C. [1 ]
Barclay, P. E. [1 ]
Beausoleil, R. G. [1 ]
机构：
[1] Hewlett Packard Labs, Informat & Quantum Syst Lab, Palo Alto, CA 94304 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 12期
关键词：
annealing; diamond; ion implantation; nitrogen; oxidation; vacancies (crystal); DIAMOND; WETTABILITY; DEFECT; STATE;
D O I：
10.1063/1.3364135
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at 465 degrees C. The spectral properties of the charge-converted centers are investigated. Charge state control of nitrogen-vacancy centers close to the diamond surface is an important step toward the integration of these centers into devices for quantum information and magnetic sensing applications.
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页数：3
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