Thermal Cycling Reliability of Polycrystalline Diamond and Aluminium Nitride Substrates

被引：0

作者：

Balakrishnan, Manoj ^{[1
]}

Sweet, M. R. ^{[1
]}

Narayanan, E. M. Sankara ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

2014 INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS, ELECTRICAL DRIVES, AUTOMATION AND MOTION (SPEEDAM) | 2014年

关键词：

Semiconductor device packaging; Electronic packaging thermal management; Thermal stress; Safety factor;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, thermal cycling of silicon power semiconductor dies mounted on polycrystalline diamond and aluminum nitride insulated substrates is presented. Thermal strain, stress and safety factor was analysed using ANSYS (R) static structural analyses tool to understand the dependence of thermal strain and stress. Polycrystalline diamond system exhibits higher thermal stress and low safety factor when compared over aluminium nitride system, further the thermal stress and safety factor were analysed based upon varying insulation layer thicknesses. Simulation results predict that thermal stress is inversely proportional to insulation layer thickness and proportionally to metallisation thickness.

引用

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页码：128 / 132

页数：5

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