Dynamics of excitonic states in GaAs/AlGaAs quantum wells

被引：4
|
作者：
Litvinenko, KL [1 ]
Gorshunov, A [1 ]
Lysenko, VG [1 ]
Hvam, JM [1 ]
机构：
[1] TECH UNIV DENMARK,MIKROELEKT CTR,DK-2800 LYNGBY,DENMARK
来源：
JETP LETTERS | 1997年 / 66卷 / 03期
关键词：
D O I：
10.1134/1.567493
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The influence of photoexcited carriers on the dynamics of the absorption spectra of GaAs/AlxGa1-xAs multilayer quantum wells is investigated experimentally. It is found that at quasiparticle densities all the way up to 10(11) cm(-2) the saturation of the excitonic absorption is due to both a decrease of oscillator strength and broadening of the excitonic lines. It is shown that in the case of femtosecond resonance laser excitation the decrease of oscillator strength is due to free electron-hole pairs, while the broadening and energy shift of the excitonic lines are due to the exciton-exciton interaction. The lifetimes of free electron-hole pairs and excitons (approximate to 65 ps and approximate to 410 ps, respectively) are determined from the exponential decrease of the change in the oscillator strength and in the width and energy position of the excitonic lines. (C) 1997 American Institute of Physics.
引用
收藏
页码：144 / 150
页数：7
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