Thermal plasma physical vapor deposition of nanostructured SiC coatings

被引：0
|
作者：
Wang, XH [1 ]
Eguchi, K [1 ]
Yamamoto, A [1 ]
Yoshida, T [1 ]
机构：
[1] Univ Tokyo, Grad Sch Engn, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan
来源：
SILICON CARBIDE 2002-MATERIALS, PROCESSING AND DEVICES | 2003年 / 742卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Nanostructured and thick SiC coatings have been successfully deposited on Si and graphite substrates by thermal plasma physical vapor deposition (TPPVD) using ultrafine SiC powder as a starting material. The control of processing parameters such as substrate temperature, composition of plasma gases, permits to the deposition of SiC coatings with a variety of microstructures and with various morphologies from dense to columnar. The maximum deposition rate reached 200 nm/s. Seebeck coefficient up to -480 muV/K was obtained for the non-doped coatings with stoichiometric composition. Nitrogen doping to the coatings made it possible to decrease the electrical resistivity from 10(-2)similar to10(-3) to 10(-4)similar to10(-5) Omegam and showing the maximum power factor of 1.0 x 10(-3) Wm(-1) K-2 at 973 K.
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页码：137 / 142
页数：6
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