Self-heating impact on TDDB in bulk FinFET devices: Uniform vs Non-uniform Stress

被引：0

作者：

Chbili, Z. ^{[1
]}

Kerber, A. ^{[1
]}

机构：

[1] GLOBALFOUNDRIES Inc, 400 Stonebreak Rd Extens, Malta, NY 12020 USA

来源：

2016 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW) | 2016年

关键词：

TDDB; power dissipation; self-heating; non-uniform stress; activation energy;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-heating is a growing concern for thin-body devices. In this paper, we discuss the impact of self-heating on TDDB using uniform and non-uniform gate dielectric stress. We show lifetime reduction with increasing drain voltages consistent with elevated temperature stress. It is also shown that the power law dependence to gate voltage is preserved at different drain voltages. Due to limited self-heating during nominal device operation TDDB lifetime is not reduced for CMOS circuits.

引用

页码：45 / 48

页数：4

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