Near-band edge light emission from silicon semiconductor on insulator diodes

被引：8
|
作者：
Zhao, J [1 ]
Zhang, G [1 ]
Trupke, T [1 ]
Wang, A [1 ]
Hudert, F [1 ]
Green, MA [1 ]
机构：
[1] Univ New S Wales, Ctr Photovoltaic Engn, Sydney, NSW 2052, Australia
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 14期
关键词：
D O I：
10.1063/1.1800286
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Light-emitting diodes have been designed and fabricated on commercial crystalline silicon semiconductor on insulator wafers. Strong infrared light emission has been observed from these diodes under forward bias conditions with an external quantum efficiency of 2x10(-6). The band edge phonon-assisted photoluminescence from the top single-crystalline silicon layer is responsible for such emission with a spectrum peaked at 1.135 mum wavelength. Due to negligible reabsorption of spontaneously emitted photons within the extremely thin silicon layer, the short wavelength emission is significantly stronger in relative terms compared to emission from bulk-silicon light-emitting devices. (C) 2004 American Institute of Physics.
引用
收藏
页码：2830 / 2832
页数：3
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