Low-frequency noise in B-doped diamond grown by CVD

被引：0
|
作者：
Chen, XY
Bauhuis, GJ
机构：
[1] Eindhoven Univ Technol, Dept Elect Engn, NL-5600 MB Eindhoven, Netherlands
[2] Catholic Univ Nijmegen, Fac Sci, NL-6525 ED Nijmegen, Netherlands
来源：
SOLID STATE COMMUNICATIONS | 1998年 / 106卷 / 11期
关键词：
semiconductor device noise; boron-doped diamond;
D O I：
10.1016/S0038-1098(98)00120-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Boron-doped diamond films were fabricated by hot filament-assisted chemical vapour deposition (CVD) on {100} and {110} natural diamond substrates. Low-frequency noise in such homoepitaxial films was measured at 300 K, 1/f noise spectra were observed at low frequencies in all samples. A high level of the 1/f noise was found in a poor quality film that was grown along the {110} orientation. The interaction of carriers with boron level was informed by analysing the g-r noise. The noise parameter ct varies from 10(-3) to 4 x 10(-1) for different orientations. (C) 1998 Published by Elsevier Science Ltd.
引用
收藏
页码：759 / 762
页数：4
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