Common Source Inductance Introduced Self-turn-on in MOSFET Turn-off Transient

被引：0

作者：

Zhang, Wen ^{[1
]}

Zhang, Zheyu ^{[1
]}

Wang, Fred ^{[1
]}

Costinett, Daniel ^{[1
]}

Tolbert, Leon ^{[1
]}

Blalock, Benjamin ^{[1
]}

机构：

[1] Univ Tennessee, Elect Engn & Comp Sci, Knoxville, TN 37996 USA

来源：

2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC) | 2017年

基金：

美国国家科学基金会;

关键词：

Common source inductance; Kelvin connection; oscillation; switching transient;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

While fast switching brings many benefits, it also presents unwanted ringing during switching transient. In this paper, an increasing magnitude ringing phenomenon is observed during the MOSFET turn-off transient. The unusual phenomenon is replicated in simulation and it is found the MOSFET channel is turned on again after it is turned off. The major cause to this unexpected turn on is found to be common source inductance and a moderate 3 nH one in simulation replicates the severe self-turnon ringing observed in experiment. This paper reveals the detrimental effect of common source inductance in fast switching. Therefore, Kelvin source connection in circuit and package design is strongly recommended.

引用

页码：837 / 842

页数：6

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