Integrated Silicon Photonics for Enabling Next-Generation Space Systems

被引:20
|
作者
Tzintzarov, George N. [1 ]
Rao, Sunil G. [1 ]
Cressler, John D. [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30308 USA
关键词
silicon photonics; deep-space optical communications; radiation effects; integrated photonics; SINGLE-EVENT TRANSIENTS; HEAVY-ION; PULSED-LASER; WAVE-GUIDES; CARRIER GENERATION; RADIATION-DAMAGE; BANDWIDTH; ENERGY; PHOTODIODES; MODULATOR;
D O I
10.3390/photonics8040131
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A review of silicon photonics for space applications is presented. The benefits and advantages of size, weight, power, and cost (SWaP-C) metrics inherent to silicon photonics are summarized. Motivation for their use in optical communications systems and microwave photonics is addressed. The current state of our understanding of radiation effects in silicon photonics is included in this discussion. Total-ionizing dose, displacement damage, and single-event transient effects are discussed in detail for germanium-integrated photodiodes, silicon waveguides, and Mach-Zehnder modulators. Areas needing further study are suggested.
引用
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页数:19
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