High-energy electron irradiation of different silicon materials

The effects of 900 MeV electron irradiation on different types of silicon substrates (standard and oxygenated floatzone, Czochralski, and epitaxial silicon) have been experimentally investigated. Irradiations up to a fluence of 2.1 x 10(15) e/cm(2) have been performed with the electron beam of the LINAC injector at the synchrotron light facility Elettra in Trieste (Italy). Irradiated devices have been electrically characterized by reverse I-V and C-V measurements. Substrate type inversion has been observed for standard and oxygenated float-zone but not for Czochralski and epitaxial devices. The effects of isothermal annealing cycles at 80 degreesC have also been studied, and the hardness factor of 900 MeV electrons, with respect to 1 MeV neutrons, has been experimentally estimated from the measurement of the reverse leakage current after annealing.