High-performance, low-voltage organic field-effect transistors using thieno[3,2-b]thiophene and benzothiadiazole co-polymers

被引:33
|
作者
Amna, Bibi [1 ,2 ]
Isci, Recep [1 ]
Siddiqi, Humaira M. [2 ]
Majewski, Leszek A. [3 ]
Faraji, Sheida [1 ,3 ]
Ozturk, Turan [1 ,4 ]
机构
[1] Istanbul Tech Univ, Chem Dept, TR-34469 Istanbul, Turkey
[2] Quaid i Azam Univ, Chem Dept, Islamabad 45320, Pakistan
[3] Univ Manchester, Dept Elect & Elect Engn, Sackville St, Manchester M13 9PL, Lancs, England
[4] Chem Grp Labs, TUBITAK UME, TR-41470 Kocaeli, Turkey
关键词
CONJUGATED POLYMERS; OPTICAL-PROPERTIES; BUILDING-BLOCKS; THIENOTHIOPHENE; DERIVATIVES; ENERGY; SEMICONDUCTORS;
D O I
10.1039/d2tc01222g
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A series of new linear conjugated co-polymers, incorporating different substituted thieno[3,2-b]thiophenes (TTs) as the donor, acetylene as the pi-bridge and benzothiadiazole (BT) as the acceptor units, were synthesized via palladium-catalyzed Sonogashira cross-coupling polymerization. The optical, electrochemical, and thermal properties of these conjugated polymers were evaluated via UV-vis, fluorescence, cyclic voltammetry, and thermogravimetric analysis. These readily soluble TT-BT co-polymers were employed as the semiconducting channel materials in bottom-gate, top-contact (BGTC) organic field-effect transistors (OFETs). The OFET devices showed p-channel field-effect behavior and successfully operated below -3 V in high yield. The polymeric materials comprising TTs with aliphatic side chains exhibited a better OFET performance compared with those with aromatic side chains. The OFETs using TT-BT with thienothiophene bearing a nonyl (C9H19) side chain showed the highest hole average carrier mobility in the saturation regime, mu(sat) = 0.1 cm(-2) V-1 s(-1), on/off current ratio, I-ON/I-OFF = 3.5 x 10(3), and the smallest subthreshold swing, SS < 200 mV dec(-1). The observed differentiation in device characteristics can be beneficial in applications where selectivity is as essential as the field-effect behavior.
引用
收藏
页码:8254 / 8265
页数:12
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