Pressure effect on the formation of ferroelectric SrBi2Ta2O9 thin films

被引：2
|
作者：
Song, KY
Lee, YK
Lee, KS
Yoon, YS
Chae, HK
Lee, WI [1 ]
机构：
[1] Inha Univ, Dept Chem, Inchon 402751, South Korea
[2] Inha Univ, Dept Elect Mat & Device Engn, Inchon 402751, South Korea
[3] Hankuk Univ Foreign Studies, Dept Chem, Yongin 449791, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 5A期
关键词：
SBT(SrBi2Ta2O9); ferroelectric; thin film; pressure effect; set-gel process;
D O I：
10.1143/JJAP.39.2791
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
It has been found that the formation of a ferroelectric phase for the SrBi2Ta2O9, (SBT) thin films derived from sol-gel solution is dependent on the oxygen pressure during the heat-treatment process. Under an elevated oxygen pressure as high as 30 atm, the heat-treatment temperature inducing the ferroelectric SET phase can be lowered to 650 degrees C. Those films processed at 650 degrees C present satisfactory ferroelectric properties, that is, the remanent polarization (P-r) is 5.0 mu C/cm(2), and the coercive field (E-c) is 43 kV/cm with 5 V application.
引用
收藏
页码：2791 / 2792
页数：2
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