Characterisation of a CMP nanoscale planarisation based process for RF MEMS resonators

被引：0
|
作者：
Enderling, S. [1 ]
Lin, H. [1 ]
Stevenson, J. T. M. [1 ]
Bunting, A. S. [1 ]
Walton, A. J. [1 ]
机构：
[1] Univ Edinburgh, Sch Engn & Elect, Scottish Microelect Ctr, Inst Integrated Micro & Nano Syst, Edinburgh EH9 3JF, Midlothian, Scotland
来源：
MICRO- AND NANOTECHNOLOGY: MATERIALS, PROCESSES, PACKAGING, AND SYSTEMS III | 2007年 / 6415卷
基金：
英国工程与自然科学研究理事会;
关键词：
chemical mechanical polishing (CMP); radio frequency (RF); micro-electro-mechanical systems (MEMS); resonators; fabrication; nanoscale; transducer gaps;
D O I：
10.1117/12.699116
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper characterises a novel Chemical Mechanical Polishing (CMP) based process for the fabrication of nanometer wide transducer gaps for RF MEMS resonators. The process requires one photolithographic step less than previously reported fabrication methods and does not suffer from transducer gap widening, which otherwise strongly affects the impedance of manufactured resonators. CMP test masks were used to evaluate the ability to produce nanometer wide planarised capacitive transducer gaps and to determine the planarity of CMP based processing. As a result of this work, pattern dependent removal rates for polysilicon have been determined and design guidelines defined to optimise the yield of CMP fabricated resonators.
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页数：8
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