The charge collection in single side silicon microstrip detectors

被引:19
|
作者
Eremin, V [1 ]
Bohm, J
Roe, S
Ruggiero, G
Weilhammer, P
机构
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Russian Acad Sci, St Petersburg 194021, Russia
[3] Acad Sci Czech Republic, Inst Phys, Prague, Czech Republic
[4] CERN, European Lab Particle Phys, CH-1211 Geneva 23, Switzerland
[5] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
关键词
silicon; microstrip detectors; signal formation; charge collection;
D O I
10.1016/S0168-9002(03)00330-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The transient current technique has been used to investigate signal formation in unirradiated silicon microstrip detectors, which are similar in geometry to those developed for the ATLAS experiment at LHC. Nanosecond pulsed infrared and red lasers were used to induce the signals under study. Two peculiarities in the detector performance were observed: an unexpectedly slow rise to the signal induced in a given strip when signals are injected opposite to the strip, and a long duration of the induced signal in comparison with the calculated drift time of charge carriers through the detector thickness-with a significant fraction of the charge being induced after charge carrier arrival. These major effects and details of the detector response for different positions of charge injection are discussed in the context of Ramo's theorem and compared with predictions arising from the more commonly studied phenomenon of signal formation in planar pad detectors. (C) 2003 Published by Elsevier Science B.V.
引用
收藏
页码:121 / 132
页数:12
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