Ab-initio Study of Physical Properties of MgO/FeO x /Fe(001) Interfaces

被引:5
|
作者
Park, Jinwoo [1 ]
Yu, Byung Deok [1 ]
Jang, Young-Rok [2 ,3 ,4 ]
机构
[1] Univ Seoul, Dept Phys, Seoul 02504, South Korea
[2] Incheon Natl Univ, Dept Phys, Incheon 22012, South Korea
[3] DIPC, Donostia San Sebastian 20018, Spain
[4] CSIC, CFM, Donostia San Sebastian 20018, Spain
关键词
MgO/FeOx/Fe(001) interfaces; Ab-initio simulations; Interfacial properties; ULTRATHIN MGO FILMS; ROOM-TEMPERATURE; MAGNETORESISTANCE;
D O I
10.3938/jkps.73.320
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The effects of partially oxidized interfacial FeO (x) layers on the physical properties of MgO/FeO (x) /Fe(001) (x = 0, 0.25, 0.5, 0.75, 1) were studied using ab-initio calculations. The free energy calculations as a function of the O chemical potential Delta mu O showed that the formation of the interfaces occurred in the order of p(1x1) MgO/Fe(001) (in the Mg-rich limit) -> p(2x2) MgO/FeO0.25/Fe(001) -> c(2x2) MgO/FeO0.5/Fe(001) -> p(2x2) MgO/FeO0.75/Fe(001) -> p(1x1) MgO/FeO/Fe(001) (in the O-rich limit) with increasing Delta mu O. The electronic structures, the work functions, and the electron rearrangements for MgO/FeO (x) /Fe(001) interfaces were also investigated. These results indicate that the O contents x of FeOx at the interfaces between MgO and Fe can significantly affect the physical properties of the MgO/FeO (x) /Fe(001) interfaces.
引用
收藏
页码:320 / 324
页数:5
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