Hg1-x-y-zCdxMnyZnzTe:: A New Alternative to Hg1-xCdxTe

被引：3
|
作者：
Gorbatyuk, IN [1 ]
Markov, AV [1 ]
Ostapov, SÉ [1 ]
Rarenko, IM [1 ]
机构：
[1] Fedkovich Natl Univ, UA-58012 Chernovtsy, Ukraine
来源：
SEMICONDUCTORS | 2004年 / 38卷 / 12期
关键词：
D O I：
10.1134/1.1836053
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The results of studying the most important energy-band parameters of a new quinary semiconductor HgCdMnZnTe solid solution are reported. It is shown that the parameters of HgCdMnZnTe can make this material highly competitive with HgCdTe, which is the main material for infrared photoelectronics in the spectral ranges 3-5 and 8-14 mum. (C) 2004 MAIK "Nauka / Interperiodica".
引用
收藏
页码：1369 / 1373
页数：5
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