In-Situ Measurement of the Effect of 1-MeV Electrons Irradiation on III-V//Si at LILT Conditions

被引:2
|
作者
Medjoubi, Karim [1 ]
Cariou, Romain [1 ]
Vauche, Laura [2 ]
Veinberg-Vidal, Elias [2 ]
Jany, Christophe [3 ]
Rostaing, Cedric [3 ]
Amalbert, Vincent [3 ]
Chabuel, Fabien [1 ]
Boizot, Bruno [4 ]
机构
[1] Univ Grenoble Alpes, CEA, LITEN, DTS,LMPI,INES, F-38000 Grenoble, France
[2] Univ Grenoble Alpes, CEA, LETI, DCOS,SCPE,LC2E, F-38000 Grenoble, France
[3] Univ Grenoble Alpes, CEA, LETI, DPFT,SMTP,LITP, F-38000 Grenoble, France
[4] Univ Paris Saclay, CEA, Serv Rech Met Phys, F-91191 Gif Sur Yvette, France
关键词
III-V//Si; solar cells; Electrons Irradiation; LILT conditions; LIRT conditions; In-situ characterization; SOLAR-CELLS; EFFICIENCY;
D O I
10.1109/REDW51883.2020.9325850
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
In this study, we investigate the potential of III-V/Si solar cell technology for space applications. We present here the experimental results before and after 1 MeV electrons irradiation at NIRT and LILT conditions.
引用
收藏
页码:167 / 172
页数:6
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