Second harmonic generation in ordered Ga1-xInxP

被引：14
|
作者：
Fluegel, B [1 ]
Mascarenhas, A [1 ]
Geisz, JF [1 ]
Olson, JM [1 ]
机构：
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
PHYSICAL REVIEW B | 1998年 / 57卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.57.R6787
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Reflection second harmonic generation (SHG) has been used to measure the rotation/reflection properties of spontaneously ordered Ga1-xInxP. Particular conditions are identified in which the SHG signal arises solely from the order-induced symmetry breaking of the (4) over bar operation in zinc blende. By extending the usual experimental techniques to the epilayer edges, the point group of ordered Ga1-xInxP was completely determined from optical methods, and the four components of the nonlinear susceptibility were measured. The case of double-variant samples is also discussed.
引用
收藏
页码：R6787 / R6790
页数：4
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