High-power laser diodes of the spectral region of 808 nm and 980 nm

被引：1

作者：

Bezotosnyi, V. V.

Bondarev, V. Yu.

Krivonos, M. S.

Oleshchenko, V. A.

Popov, Yu. M.

Cheshev, E. A.

机构：

来源：

BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2010年 / 37卷 / 05期

关键词：

high-power laser diodes; 808; and; 980; nm; assembly technique;

D O I：

10.3103/S1068335610050052

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A technique for assembling high-power laser diodes emitting at 808 and 980 nm was developed, which stably provides high radiation parameters when using one of the standard types of heat sinks for assembling high-power laser diodes, i.e., the C-mount. The maximum achievable power of laser diodes with a stripe contact width of 150 A mu m in the cw lasing mode was 25 W at a temperature of 20 A degrees C.

引用

页码：143 / 144

页数：2

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V. Yu. Bondarev
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V. A. Oleshchenko
Yu. M. Popov
E. A. Cheshev
[J]. Bulletin of the Lebedev Physics Institute, 2010, 37 : 143 - 144
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