Temperature dependence of the stacking-fault energy in GaAs

被引：12
|
作者：
Moon, WJ
Umeda, T
Saka, H [1 ]
机构：
[1] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648603, Japan
[2] Japan Sci & Technol Corp, Tokyo 1028666, Japan
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 2003年 / 83卷 / 04期
关键词：
D O I：
10.1080/0950083031000072480
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
GaAs single crystals have been indented by a Vickers indenter at room temperature and 77 K. Dislocations thereby introduced were studied using the weak-beam method of electron microscopy. The dislocations have a Burgers vector of (a/2)[110] and are dissociated into two Shockley partials. The stacking-fault energy decreases from 43 mJ m(-2) at 923 K to 15 mJ m(-2) at 77 K.
引用
收藏
页码：233 / 240
页数：8
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